Ittria Coating Device (AF-IP Device)
A yttrium (Y2O3) film with excellent plasma resistance is formed using the PVD method. A thick film (10μm) is achieved with a newly developed ion plating method.
A dense oxide film with a thickness of 10 μm is formed at low temperatures using a newly developed arc filament-type ion plating method. This method enables the deposition of yttria films with excellent plasma resistance, suitable for semiconductor manufacturing equipment components. A simple process using ion plating achieves a dense film quality. Not only yttria films but also various reactive films such as SiC, TiC, and CrN can be formed from solid metal materials. The uniquely developed ion plating method opens up new applications for surface treatment.
- Company：神港精機 東京支店
- Price：Other
